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The Pareto distribution, named after the Italian civil engineer, economist, and sociologist Vilfredo Pareto, [2] is a power-law probability distribution that is used in description of social, quality control, scientific, geophysical, actuarial, and many other types of observable phenomena; the principle originally applied to describing the distribution of wealth in a society, fitting the trend ...
In normal use at constant depth, only oxygen is consumed: small volumes of inert gases are lost during any one dive, due mainly to venting of the gas as it expands on ascent. For example, a closed circuit rebreather diver theoretically need not use up any more diluent gas after reaching the full depth of the dive.
Quantitative genetics is the study of quantitative traits, which are phenotypes that vary continuously—such as height or mass—as opposed to phenotypes and gene-products that are discretely identifiable—such as eye-colour, or the presence of a particular biochemical.
Binomial probability mass function and normal probability density function approximation for n = 6 and p = 0.5. If n is large enough, then the skew of the distribution is not too great. In this case a reasonable approximation to B(n, p) is given by the normal distribution (, ()),
The Lockheed C-5 Galaxy is a large military transport aircraft designed and built by Lockheed, and now maintained and upgraded by its successor, Lockheed Martin.It provides the United States Air Force (USAF) with a heavy intercontinental-range strategic airlift capability, one that can carry outsized and oversized loads, including all air-certifiable cargo.
Hartsfield–Jackson began with a five-year, rent-free lease on 287 acres (116 ha) that was an abandoned auto racetrack named The Atlanta Speedway. The lease was signed on April 16, 1925, by Mayor Walter Sims , who committed the city to develop it into an airfield.
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating at frequencies up to 60 MHz. [33] They were made by etching depressions into an n-type germanium base from both sides with jets of indium(III) sulfate until it was a few ten-thousandths of an inch thick.